Diodes DMN55D0UT Bedienungsanleitung PDF herunterladen (Seite 4)

DMN55D0UT

Document number: DS31330 Rev. 5 - 2

4 of 5

www.diodes.com

December 2012

DMN55D0UT

NEW PRODUCT

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

0.5

0.6

0.7

0.8

0.9

1.0

1.1

I = 250µA

V , SOURCE-DRAIN VOLTAGE (V)

I, S

(A)

Fig. 8 Diode Forward Voltage vs. Current

0.0001

0.001

0.01

0.1

0.1 0.3 0.5 0.7 0.9 1.1

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

0.001

0.01

0.1

100

r(t),

ANSIEN

MAL

ESIS

Fig. 9 Transient Thermal Response

0.00001 0.0001 0.001 0.01 0.1 1 10

t , PULSE DURATION TIME (s)

0.000001

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

R (t) = r(t) * R

R = 625°C/W

θθ

JA JA

P(pk)

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT523

Dim Min Max Typ

A 0.15 0.30 0.22

B 0.75 0.85 0.80

C 1.45 1.75 1.60

⎯ ⎯

0.50

G 0.90 1.10 1.00

H 1.50 1.70 1.60

J 0.00 0.10 0.05

K 0.60 0.80 0.75

L 0.10 0.30 0.22

M 0.10 0.20 0.12

N 0.45 0.65 0.50

0° 8°

⎯

All Dimensions in mm

1 2 3 4 5

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