
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
3 of 5
www.diodes.com
December 2012
© Diodes Incorporated
DMN55D0UT
NEW PRODUCT
Fig. 1 Typical Output Characteristics
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
AIN
EN
(A)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V = 1.0V
GS
V = 1.5V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
V = 3.0V
GS
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I, D
AIN
EN
(A)
D
0
0.1
0.2
0.3
0.4
0.5
01 234
V = 10V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
1
10
0.001 0.01 0.1 1
V = 4.0V
GS
V= 2.5V
GS
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
Ω
1
10
0 0.1 0.2 0.3 0.4 0.5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 5 On-Resistance Variation with Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R , DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
DS(ON)
V = 2.5V
I = 80mA
GS
D
V = 4V
I = 100mA
GS
D
0.4
Fig. 6 Typical Capacitance
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
,
A
A
I
A
E (p
)
0
5
10
15
20
25
30
35
f = 1MHz
V = 0V
GS
C
iss
C
oss
C
rss
Kommentare zu diesen Handbüchern