Diodes DMN55D0UT Bedienungsanleitung PDF herunterladen (Seite 1)

DMN55D0UT

Document number: DS31330 Rev. 5 - 2

1 of 5

www.diodes.com

December 2012

DMN55D0UT

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage

• Low Input Capacitance

• ESD Protected Gate to 2kV

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT523

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMN55D0UT -7 Commercial SOT523 3000/Tape & Reel

DMN55D0UTQ -7 Automotive SOT523 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"

and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT523

Top View

Equivalent Circuit

View

NAC = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: U = 2007)

M = Month (ex: 9 = September)

NAC YM

Source

Gate

Protection

Diode

Gate

Drain

ESD PROTECTED TO 2kV

1 2 3 4 5

Inhaltsverzeichnis

Seite 1 - DMN55D0UT

DMN55D0UT Document number: DS31330 Rev. 5 - 2 1 of 5 www.diodes.com December 2012© Diodes Incorporated DMN55D0UTNEW PRODUCT N-CHANNEL ENHANCEMENT

Seite 2

DMN55D0UT Document number: DS31330 Rev. 5 - 2 2 of 5 www.diodes.com December 2012© Diodes Incorporated DMN55D0UTNEW PRODUCT Maximum Ratings (@

Seite 3 - NEW PRODUCT

DMN55D0UT Document number: DS31330 Rev. 5 - 2 3 of 5 www.diodes.com December 2012© Diodes Incorporated DMN55D0UTNEW PRODUCT Fig. 1 Typical Outp

DMN55D0UT Document number: DS31330 Rev. 5 - 2 4 of 5 www.diodes.com December 2012© Diodes Incorporated DMN55D0UTNEW PRODUCT V , GATE THRESHOLD

Seite 5 - Suggested Pad Layout

DMN55D0UT Document number: DS31330 Rev. 5 - 2 5 of 5 www.diodes.com December 2012© Diodes Incorporated DMN55D0UTNEW PRODUCT Suggested Pad Layou

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