
DMN3404L
Document number: DS31787 Rev. 8 - 2
5 of 8
www.diodes.com
August 2013
© Diodes Incorporated
DMN3404L
0 5 1015 202530
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Total Capacitance
,
A
A
ITA
E (pF)
T
1
10
100
1000
10000
C
iss
C
rss
C
oss
f = 1MHz
Q , TOTAL GATE CHARGE (nC)
g
Figure 10 Gate-Charge Characteristics
V,
A
E-S
E V
L
A
E (V)
GS
0
2
4
6
8
10
0 2 4 6 8 10 12
V = 15V
I = 5.8A
DS
D
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11 Safe Operation Area
0.01
0.1
1
10
100
I, D
AI
E
(A)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 Safe Operation Area
I, D
AI
E
(A)
D
0.001
0.01
0.1
1
10
100
R
Limited
DS(on)
T = 150°C
T = +25°C
Single Pulse
Minimum
Recommended
Pad
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
A
SIE
E
MAL
ESIS
A
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
R (t) = r(t) *
JA
R
R = 163°C/W
JA
JA
P(pk)
t
1
t
2
t , PULSE DURATION TIME (s)
1
Figure 13 Transient Thermal Response
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
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