DMN3404L
Document number: DS31787 Rev. 8 - 2
3 of 8
www.diodes.com
August 2013
© Diodes Incorporated
DMN3404L
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 A
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8 )
Gate Threshold Voltage
V
GS(th)
1.0 1.5 2.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance T
J
= -40°C (Note 9) R
DS(ON)
— 23 27 —
V
GS
= 4.5V, I
D
= 4.8A
— 57 74 —
V
GS
=3V, I
D
=2A
Static Drain-Source On-Resistance T
J
= +25°C R
DS(ON)
— 24 28
m
V
GS
= 10V, I
D
= 5.8A
— 33 42
V
GS
= 4.5V, I
D
= 4.8A
— 63 82
V
GS
=3V, I
D
=2A
Static Drain-Source On-Resistance T
J
= +85°C (Note 9) R
DS(ON)
— 71 95 m
V
GS
=3V, I
D
=2A
Forward Transfer Admittance
|Y
fs
|
— 10 — S
V
DS
= 5V, I
D
= 5.8A
Diode Forward Voltage
V
SD
— 0.75 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
— 498 — pF
V
DS
= 15V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
— 52 — pF
Reverse Transfer Capacitance
C
rss
— 45 — pF
Gate Resistance
R
g
— 1.75 2.8
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 3V) Q
g
— 3.8 5.3 nC
V
GS
= 3V, V
DS
= 15V, I
D
= 1A
Total Gate Charge (V
GS
= 4.5V) Q
g
— 5.3 7.5 nC
V
GS
= 10V/4.5V, V
DS
= 15V,
I
D
= 5.8A
Total Gate Charge (V
GS
= 10V) Q
g
— 11.3 16 nC
Gate-Source Charge
Q
gs
— 1.4 — nC
Gate-Drain Charge
Q
gd
— 2.1 — nC
Turn-On Delay Time
t
D(on)
— 3.41 10 ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6, R
G
= 3
Turn-On Rise Time
t
r
— 6.18 13 ns
Turn-Off Delay Time
t
D(off)
— 13.92 28 ns
Turn-Off Fall Time
t
f
— 2.84 10 ns
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design and 25°C data. Not subject to production testing
10. Guaranteed by design. Not subject to production testing.
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
I, D
AIN
EN
(A)
D
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
012345
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
V = 2.5V
GS
V = 3.5V
GS
V = 4.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
AIN
EN
(A)
D
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = -40°C
A
T = 150°C
A
V = 5V
DS
T = 125°C
A
(7 Seiten)
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