Diodes DMN2016UTS Bedienungsanleitung PDF herunterladen (Seite 3)

DMN2016UTS

Document number: DS31995 Rev. 1 - 2

3 of 6

www.diodes.com

December 2009

DMN2016UTS

NEW PRODUCT

0.01

0.02

0.03

0.04

0.05

0.06

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

V = 1.8V

V = 4.5V

V = 10V

0.01

0.02

0.03

0.04

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

, D

-S

ESIS

E ( )

DS(ON)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 8.0V

I = 10A

V = 4.5V

I = 5A

0.01

0.02

0.03

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

V = 8.0V

I = 10A

V = 4.5V

I = 5A

0.4

0.8

1.2

1.6

2.0

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 250µA

I = 1mA

0 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

0.2

I, S

(A)

T = 25°C

1 2 3 4 5 6

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