Diodes DMN2016UTS Bedienungsanleitung PDF herunterladen (Seite 2)

DMN2016UTS

Document number: DS31995 Rev. 1 - 2

2 of 6

www.diodes.com

December 2009

DMN2016UTS

NEW PRODUCT

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

DSS

20 - - V

= 0V, I

= 250μA

Zero Gate Voltage Drain Current T

= 25°C I

DSS

- - 1.0

μA

= 20V, V

= 0V

Gate-Source Leakage

GSS

- - ±10

μA

= ±8V, V

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

(

)

0.4 0.72 1.0 V

= V

, I

= 250μA

Static Drain-Source On-Resistance

DS (ON)

14.5

16.5

mΩ

= 4.5V, I

= 9.4A

= 2.5V, I

= 8.3A

Forward Transfer Admittance

- 19 - S

= 5V, I

= 9.4A

Diode Forward Voltage

- 0.65 1.2 V

= 0V, I

= 1.3A

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

iss

- 1495 -

= 10V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

- 161 -

Reverse Transfer Capacitance

rss

- 152 -

Gate Resistance

- 1.42 -

= 0V, V

= 0V, f = 1MHz

Total Gate Charge

- 16.5 -

= 4.5V, V

= 10V,

= 9.4A

Gate-Source Charge

- 2.5 -

Gate-Drain Charge

- 3.2 -

Turn-On Delay Time

(

)

- 10.39 -

= 10V, V

= 4.5V,

GEN

= 6Ω, I

= 1A, R

= 10Ω

Turn-On Rise Time

- 11.66 -

Turn-Off Delay Time

(

off

)

- 59.38 -

Turn-Off Fall Time

- 16.27 -

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

00.511.52

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

I, D

(A)

V = 1.2V

V = 1.5V

V = 2.0V

V = 2.5V

V = 3.0V

V = 4.5V

V = 1.5V

0 0.5 1 1.5 2 2.5 3

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

I, D

(A)

V = 5V

T = -55°C

T = 25°C

T = 125°C

T = 150°C

T = 85°C

1 2 3 4 5 6

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