
BC847PN
Document number: DS30278 Rev. 13 - 2
4 of 6
www.diodes.com
November 2013
© Diodes Incorporated
BC847PN
Electrical Characteristics: PNP, BC857B Type (Q
2
) (@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 8) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50 — — V
I
C
= -100µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-45 — — V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6 — — V
I
E
= -100µA, I
C
= 0
DC Current Gain
h
FE
220 290 475 —
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage
V
CE(sat)
—
-75
-250
-300
-650
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
—
-700
-850
—
-950
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage
V
BE(on)
-600
—
-650
—
-750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current
I
CBO
—
—
—
—
-15
-4.0
nA
µA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
Gain Bandwidth Product
f
T
100 200 — MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
— 3 4.5 pF
V
CB
= -10V, f = 1.0MHz
Noise Figure NF — — 10 dB
V
CE
= -5V, I
C
= -200µA,
R
G
= 2.0kΩf = 1.0kHz,
f = 200Hz
Note: 8. Short duration pulse test used to minimize self-heating effect.
-1
-10
-100
-1,000
-1 -10 -100
-1,000
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
Figure 6. Typical DC Current Gain vs. Collector Current
(BC857B Type)
C
-1-0.1 -10 -100
-1,000
V,
OLL
O
-
MI
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 7. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC857B Type)
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
-0.1
-0.2
-0.3
-0.4
-0.5
I
C
I
B
= 10
6
10
Cibo
Cobo
A
A
ITA
E (pF)
V , REVERSE VOLTAGE (V)
Figure 8. Typical Capacitance Characteristics (BC857B Type)
R
f = 1MHz
-10
-100
-1,000
-1
-10
-100
f,
IN-B
NDWID
H
DU
(
Hz)
t
I , COLLECTOR CURRENT (mA)
Figure 9. Typical Gain-Bandwidth Product
vs. Collector Current (BC857B Type)
C
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