Diodes BC847PN Bedienungsanleitung Seite 2

  • Herunterladen
  • Zu meinen Handbüchern hinzufügen
  • Drucken
  • Seite
    / 6
  • Inhaltsverzeichnis
  • LESEZEICHEN
  • Bewertet. / 5. Basierend auf Kundenbewertungen
Seitenansicht 1
BC847PN
Document number: DS30278 Rev. 13 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
BC847PN
Absolute Maximum Ratings: NPN, BC847B Type (Q
1
) (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
100 mA
Peak Collector Current
I
CM
200 mA
Peak Emitter Current
I
EM
200 mA
Absolute Maximum Ratings: PNP, BC857B Type (Q
2
) (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-45 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
I
C
-100 mA
Peak Collector Current
I
CM
-200 mA
Peak Emitter Current
I
EM
-200 mA
Thermal Characteristics – Total Device (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) Total Device
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
625 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150 °C
Note: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
Thermal Characteristics – Total Device
0
50
100
150
200
250
0 40 80 120 160 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
d
T , AMBIENT TEMPERATURE ( C)
Fig. 1, Power Derating Curve (Total Device)
A
°
Seitenansicht 1
1 2 3 4 5 6

Kommentare zu diesen Handbüchern

Keine Kommentare