Diodes ZXMN2B01F Bedienungsanleitung PDF herunterladen

Issue 2 - March 2007 1 www.zetex.com

ZXMN2B01F

20V SOT23 N-channel enhancement mode MOSFET

with low gate drive capability

Summary

Description

This new generation trench MOSFET from Zetex features low on-

resistance achievable with low gate drive.

Features

• Low on-resistance

• Fast switching speed

• Low gate drive capability

• SOT23 package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device marking

2B1

(BR)DSS

DS(on)

(⍀)I

(A)

0.100 @ V

= 4.5V 2.4

0.150 @ V

= 2.5V 2.0

0.200 @ V

= 1.8V 1.7

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXMN2B01FTA 7 8 3,000

Top view

1 2 3 4 5 6 7 8

ZXMN2B01F 1

Inhaltsverzeichnis

Seite 1 - ZXMN2B01F

Issue 2 - March 2007 1 www.zetex.com© Zetex Semiconductors plc 2007ZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability

Seite 2

ZXMN2B01FIssue 2 - March 2007 2 www.zetex.com© Zetex Semiconductors plc 2007Absolute maximum ratingsNOTES:(a) For a device surface mounted on 25mm x 2

Seite 3

Seite 4

ZXMN2B01FIssue 2 - March 2007 4 www.zetex.com© Zetex Semiconductors plc 2007Electrical characteristics (at Tamb = 25°C unless otherwise stated)Paramet

Seite 5

Seite 6

ZXMN2B01FIssue 2 - March 2007 6 www.zetex.com© Zetex Semiconductors plc 2007Typical characteristicsCurrentregulatorChargeGate charge test circuitSwitc

Seite 7

ZXMN2B01FIssue 2 - March 2007 7 www.zetex.com© Zetex Semiconductors plc 2007Package outline - SOT23Note: Controlling dimensions are in millimeters. Ap

Seite 8

ZXMN2B01FIssue 2 - March 2007 8 www.zetex.com© Zetex Semiconductors plc 2007 DefinitionsProduct changeZetex Semiconductors reserves the right to alter

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Inhaltsverzeichnis

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