Diodes ZXTP2041F Bedienungsanleitung PDF herunterladen (Seite 4)

ZXTP2041F

tasheet Number: DS33721 Rev. 7 - 2

4 of 7

www.diodes.com

December 2013

Product Line o

Diodes Incorporated

ZXTP2041F

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ. Max Unit Test Condition

Collector-Base Breakdown Voltage

CBO

-40 - - V

= -100µA

Collector-Emitter Breakdown Voltage (Note 9)

CEO

-40 - - V

= -10mA

Emitter-Base Breakdown Voltage

EBO

-7 - - V

= -100µA

Collector Cutoff Current

CBO

- - -100 nA

= -30V

Emitter Cutoff Current

EBO

- - -100 nA

= -5.6V

Emitter Cutoff Current

CES

- - -100 nA

= -30V

DC current transfer Static ratio (Note 9)

300 - -

= -1mA, V

= -5V

300 - 800

= -100mA, V

= -5V

250 - -

= -500mA, V

= -5V

160 - -

= -1A, V

= -5V

30 - -

= -2A, V

= -5V

Collector-Emitter Saturation Voltage (Note 9)

CE(sat)

- - -200

= -100mA, I

= -1mA

- - -350

= -500mA, I

= -20mA

- - -500

= -1A, I

= -100mA

Base-Emitter Saturation Voltage (Note 9)

(

sat

)

- - -1.1 V

= -1A, I

= -100mA

Base-Emitter Turn-on Voltage (Note 9)

(

)

- - -1.0 V

= -1A, V

= -5V

Transitional Frequency

150 300 - MHz

= -50mA, V

= -10V,

f = 100MHz

Output capacitance

obo

- - 10 pF

= -10V, f = 1MHz,

Switching Time

Delay Time

(

)

- 34.9 -

= -10V, I

= -500mA,

= -I

=-25mA

Rise Time

)

- 19.2 -

Storage Time

(

)

- 249 -

Fall Time

(

)

- 62 -

Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.

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