
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
3 of 9
www.diodes.com
November 2012
© Diodes Incorporated
ZXTC2063E6
ADVANCE INFORMATION
Product Line o
Diodes Incorporated
Thermal Characteristics and Derating Information
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
110
0.1 1 10
10m
100m
1
10
100m 1 10
10m
100m
1
10
NPN
T
amb
=25°C
50mm x 50mm 2oz FR4
One active die
V
CE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
C
Collector Current (A)
V
CE
Collector-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
50mm x 50mm 2oz FR4
One active die
50mm x 50mm 2oz FR4
One active die t<5secs
25mm x 25mm 1oz FR4
One active die
25mm x 25mm 1oz FR4
Two active die
15mm x 15mm 1oz FR4
One active die
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Safe Operating Area
Single Pulse
T
amb
=25°C
50mm x 50mm 2oz FR4
One active die
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
T
amb
=25°C
50mm x 50mm 2oz FR4
One active die
Transient Thermal Impedance
Pulse Width (s)
Thermal Resistance (°C/W)
PNP
T
amb
=25°C
50mm x 50mm 2oz FR4
One active die
100µs
1ms
10ms
100ms
1s
DC
V
CE(sat)
Limit
-V
CE
Collector-Emitter Voltage (V)
-I
C
Collector Current (A)
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