Diodes ZXMN7A11G Bedienungsanleitung PDF herunterladen (Seite 4)

ZXMN7A11G

Issue 1 - March 2006 4 www.zetex.com

Electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter Symbol Min. Typ. Max. Unit Conditions

Static

Drain-source breakdown

voltage

(BR)DSS

70 V I

= 250␮A, V

=0V

Zero gate voltage drain current I

DSS

1 ␮A V

= 70V, V

=0V

Gate-body leakage I

GSS

100 nA V

=±20V, V

=0V

Gate-source threshold voltage V

GS(th)

1.0 V I

= 250␮A, V

Static drain-source on-state

resistance

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

ⱕ 300␮s; duty cycle ⱕ 2%.

DS(on)

0.13 ⍀ V

= 10V, I

= 4.4A

0.19 ⍀ V

= 4.5V, I

= 3.8A

Forward transconductance

(*)(‡)

4.66 S V

= 15V, I

= 4.4A

Dynamic

(‡)

Input capacitance C

iss

298 pF

= 40V, V

=0V

f=1MHz

Output capacitance C

oss

35 pF

Reverse transfer capacitance C

rss

21 pF

Switching

(†)(‡)

(†) Switching characteristics are independent of operating junction temperature.

Turn-on-delay time t

d(on)

1.9 ns

= 35V, I

= 1A

≅6.0⍀, V

= 10V

Rise time t

2ns

Turn-off delay time t

d(off)

11.5 ns

Fall time t

5.8 ns

Total gate charge Q

4.35 nC V

= 35V, V

= 5V

= 4.4A

Total gate charge Q

7.4 nC

=35V, V

= 10V

= 4.4A

Gate-source charge Q

1.06 nC

Gate drain charge Q

1.8 nC

Source-drain diode

Diode forward voltage

(*)

0.85 0.95 V T

=25°C, I

= 2.5A,

=0V

Reverse recovery time

(‡)

(‡) For design aid only, not subject to production testing.

19.8 ns

=25°C, I

= 2.5A,

di/dt=100A/␮s

Reverse recovery charge

(‡)

14 nC

1 2 3 4 5 6 7 8

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