Diodes ZXMN10A11G Bedienungsanleitung PDF herunterladen (Seite 2)

ZXMN10A11G

Document Number DS32056 Rev. 6 - 2

2 of 8

www.diodes.com

January 2010

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Diodes Incorporated

ZXMN10A11G

ADVANCE INFORMATION

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source voltage

DSS

100 V

Gate-Source voltage

±20

Continuous Drain current

= 10V

(Note 2)

2.4

= 70°C (Note 2)

1.9

(Note 1) 1.7

Pulsed Drain current

= 10V

(Note 3)

7.9 A

Continuous Source current (Body diode) (Note 2)

4.6 A

Pulsed Source current (Body diode) (Note3 )

7.9 A

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power dissipation

Linear derating factor

(Note 1)

2.0

mW/°C

(Note 2)

3.9

Thermal Resistance, Junction to Ambient

(Note 1)

62.5

°C/W

(Note 2) 32.0

Thermal Resistance, Junction to Lead (Note 4)

9.8

°C/W

Operating and storage temperature range

, T

STG

-55 to 150

°C

Notes: 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

2. Same as note (1), except the device is measured at t ≤ 10 sec.

3. Same as note (1), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

4. Thermal resistance from junction to solder-point (at the end of the drain lead)

1 2 3 4 5 6 7 8

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