Diodes ZX5T2E6 Bedienungsanleitung PDF herunterladen (Seite 4)

ZX5T2E6

SEMICONDUCTORS

ISSUE 1 - MAY 2004

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

Collector-base breakdown voltage BV

CBO

-25 -49 V

= -100␮A

Collector-emitter breakdown voltage BV

CEO

-20 -43 V I

= -10mA *

Emitter-base breakdown voltage BV

EBO

-7.5 -8.4 V

= -100␮A

Collector cut-off current I

CBO

-100 nA V

= -20V

Collector cut-off current I

CES

-100 nA V

= -20V

Emitter cut-off current I

EBO

-100 nA V

=-6V

Collector-emitter saturation voltage V

CE(SAT)

-10

-100

-110

-15

-140

-130

= -0.1A, I

= -10mA*

=-1A,I

= -10mA*

= -3.5A, I

= -350mA*

Base-emitter saturation voltage V

BE(SAT)

-0.96 -1.1 V I

= -3.5A, I

= -350mA*

Base-emitter turn-on voltage V

BE(ON)

-0.8 -0.9 V I

= -3.5A, V

=-2V*

Static forward current transfer ratio h

300

150

575

450

285

900

= -10mA, V

=-2V*

=-1A,V

=-2V*

= -3.5A, V

=-2V*

= -10A, V

=-2V*

Transition frequency f

110 I

= -50mA, V

= -10V

f = 50MHz

Output capacitance C

OBO

45 pF V

=-10V,f=1MHz*

Switching times t

OFF

325

=-2A,V

= -10V,

= -40mA

ELECTRICAL CHARACTERISTICS (at T

amb

= 25° C unless otherwise stated)

NOTES

* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.

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