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DS30381 Rev. 8 - 2
1 of 4
www.diodes.com
MIMD10A
© Diodes Incorporated
MIMD10AMIMD10A
DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
Features
NEW PPRODRODUCT T UC
Epitaxial Planar Die Construction
Built-In Biasing Resistors
One 500mA PNP and One 100mA NPN
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 3 and 4)
Mechanical Data
Case: SOT-363
Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020A
Terminals: Finish - Solderable per MIL-STD-202,
Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking Code: C73 See Page 4
Ordering & Date Code: See Page 4
Terminal Connections: See Diagram
Weight: 0.015 grams (approximate)
P/N R1 R2
MIMD10A Tr1
Tr2
0.1K
10K
10K
-
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J
0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
8°
All Dime sions in mmn
A
M
J
L
D
Maximum Ratings PNP Section Tr1 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage
V
CC
-50 V
Input Voltage
V
IN
-5 to +5 V
Output Current
I
O
-500 mA
Maximum Ratings NPN Section Tr2 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100 mA
Maximum Ratings - Total @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
P
d
200 mW
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150 °C
Notes: 1. No purposefully added lead.
2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
SCHEMATIC DIAGRAM
R
1
R
1
R
2
T
r2
T
r1
B
C
H
K
E
1
C
2
B
1
C
1
E
2
B
2
F
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1 2 3 4

Inhaltsverzeichnis

Seite 1 - MIMD10AMIMD10A

DS30381 Rev. 8 - 2 1 of 4 www.diodes.com MIMD10A © Diodes Incorporated MIMD10AMIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Feat

Seite 2

DS30381 Rev. 8 - 2 2 of 4 www.diodes.com MIMD10A © Diodes Incorporated NEW PRODUCT Electrical Characteristics PNP Section Tr1 @TA = 25°C unle

Seite 3 - NEW PRODUCT

DS30381 Rev. 8 - 2 3 of 4 www.diodes.com MIMD10A © Diodes Incorporated Typical Curves – Tr2 -50050100250200150501000T , AMBIENT TEMPERATURE ( C

Seite 4 - © Diodes Incorporated

DS30381 Rev. 8 - 2 4 of 4 www.diodes.com MIMD10A © Diodes Incorporated Ordering Information (Note 5) Device Packaging Shipping MIMD10A-7-F SOT

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