Diodes FMMT6520 Bedienungsanleitung PDF herunterladen (Seite 2)

FMMT6520

Document Number: DS33123 Rev. 3 - 2

2 of 4

www.diodes.com

August 2011

Product Line o

Diodes Incorporated

FMMT6520

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-350 V

Collector-Emitter Voltage

CEO

-350 V

Emitter-Base Voltage

EBO

-5 V

Continuous Collector Current

-500 mA

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4) P

330 mW

Thermal Resistance, Junction to Ambient (Note 4)

θJA

379

°C/W

Thermal Resistance, Junction to Lead (Note 5)

θJL

350

°C/W

Operating and Storage Temperature Range T

STG

-55 to +150

°C

Notes: 4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the

device is measured when operating in a steady-state condition.

5. Thermal resistance from junction to solder-point (at the end of the collector lead).

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

CBO

-350 V

= -100µA

Collector-Emitter Breakdown Voltage (Note 6)

CEO

-350 V

= -1mA

Emitter-Base Breakdown Voltage

EBO

-5 V

= -10µA

Collector Cutoff Current

CBO

-50 nA

= -250V

Emitter Cutoff Current

EBO

-50 nA

= -3V

Static Forward Current Transfer Ratio

(Note 6)

200

= -1mA, V

= -10V

= -10mA, V

= -10V

= -30mA, V

= -10V

= -50mA, V

= -10V

= -100mA, V

= -10V

Collector-Emitter Saturation Voltage

(Note 6)

CE(sat)

-300

-350

-500

-1000

=- 10mA, I

= -1mA

=- 20mA, I

= -2mA

= -30mA, I

= -3mA

= -50mA, I

= -5mA

Base-Emitter Saturation Voltage(Note 6)

BE(sat)

-750

-850

-900

= -10mA, I

= -1mA

= -20mA, I

= -2mA

= -30mA, I

= -3mA

Base-Emitter Turn-On Voltage(Note 6)

(

)

-2.0 V

= -100mA, V

= -10V

Output Capacitance

obo

6 pF

= -20V, f = 1MHz

Transition Frequency

50 MHz

= -20V, I

= -10mA,

f = 20MHz

Note: 6.

Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%

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