Diodes FMMT591Q Bedienungsanleitung Seite 4

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FMMT591Q
Document number: DS37010 Rev. 1 - 2
4 of 7
www.diodes.com
March 2014
© Diodes Incorporated
FMMT591Q
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-80 — V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-60 — V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.1 V
I
E
= -100µA
Collector-Base Cutoff Current
I
CBO
<1 -100 nA
V
CB
= -60V
Emitter-Base Cutoff Current
I
EBO
<1 -100 nA
V
EB
= -5.6V
Collector-Emitter Cut-Off Current
I
CES
<1 -100 nA
V
CE
= -50V
Static Forward Current Transfer Ratio (Note 9)
h
FE
100
100
80
15
220
175
155
40
300
I
C
= -1mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(SAT)
-155
-295
-180
-350
mV
I
C
= - 500mA, I
B
= -50mA
I
C
= - 1A, I
B
= -100mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(SAT)
965 -1200 mV
I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(ON)
830 -1000 mV
I
C
= -1A, V
CE
= -5V
Transition Frequency
f
T
150 — — MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Output Capacitance
C
obo
— — 10 pF
V
CB
= -10V, f = 1MHz
Note: 9.
Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
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