Diodes DSS5160T Bedienungsanleitung PDF herunterladen (Seite 3)

DSS5160T

Document number: DS35532 Rev. 1 - 2

3 of 6

www.diodes.com

January 2012

DSS5160T

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

Collector-Base Breakdown Voltage

CBO

-80

⎯ ⎯

= -100μA

Collector-Emitter Breakdown Voltage (Note 6)

CEO

-60

⎯ ⎯

= -10mA

Emitter-Base Breakdown Voltage

EBO

-5

⎯ ⎯

= -100μA

Collector-Base Cutoff Current

CBO

⎯ ⎯

-100

= -20V, I

= 0

⎯ ⎯

-50

μA

= -20V, I

= 0, T

= 150°C

Emitter-Base Cutoff Current

EBO

⎯ ⎯

-100 nA

= -5V, I

= 0

DC Current Gain (Note 6)

200

⎯ ⎯

⎯

= -5V, I

= -1mA

150

⎯ ⎯ V

= -5V, I

= -500mA

100

⎯ ⎯ V

= -5V, I

= -1A

Collector-Emitter Saturation Voltage (Note 6)

CE(sat)

⎯ ⎯

-175

= -100mA, I

= -1mA

⎯ ⎯

-180

= -500mA, I

= -50mA

⎯ ⎯

-340

= -1A, I

= -100mA

Equivalent On-Resistance

(

sat

)

⎯ ⎯

340

mΩ

= -1A, I

= -100mA

Base-Emitter Saturation Voltage

(

sat

)

⎯ ⎯

-1.1 V

= -1A, I

= -50mA

Base-Emitter Turn-on Voltage

(

)

⎯ ⎯

-0.9 V

= -5V, I

= -1A

Transition Frequency

150

⎯ ⎯

MHz

= -10V, I

= -50mA,

f = 100MHz

Output Capacitance

⎯ ⎯

15 pF

= -10V, f = 1MHz

Turn-On Time

⎯

= -10V, I

= -0.5A,

= I

= -25mA

Delay Time

⎯

Rise Time

⎯

Turn-Off Time

off

⎯

265

⎯

Storage Time

⎯

230

⎯

Fall Time

⎯

Notes: 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

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