
DMP2035UTS
Document number: DS31940 Rev. 3 - 2
4 of 6
www.diodes.com
January 2010
© Diodes Incorporated
DMP2035UTS
NEW PRODUCT
0 2 4 6 8 101214161820
Fig. 9 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
I, D
AIN-S
E LEAKA
E
EN
(nA)
DSS
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
Fig. 10 Leakage Current vs. Gate-Source Voltage
12345678
V , GATE-SOURCE VOLTAGE (V)
GS
I , LEAKA
E
EN
(nA)
GSS
1
10
100
1,000
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
I , LEAKA
E
E
(nA)
GSS
Fig. 11 Leakage Current vs. Gate-Source Voltage
12345678
V , GATE-SOURCE VOLTAGE (V)
GS
1
10
100
1,000
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
10
20
30
40
50
60
70
80
90
100
,
EAK
A
SIE
WE
(W)
(PK)
Fig. 12 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
0.0001 0.001 0.01 0.1 1 10 100 1,000
Single Pulse
R = 143°C/W
T - T = P * R (t)
θ
θ
JA
JA JA
R (t) = r(t) *
θ
JA
R
θ
JA
Fig. 13 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
ANSIEN
E
MAL
ESIS
AN
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 143°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1
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