Diodes DESD5V0S1BB Bedienungsanleitung PDF herunterladen (Seite 2)

DESD5V0S1BB

Document number: DS35590 Rev. 5 - 2

2 of 4

www.diodes.com

March 2012

DESD5V0S1BB

ADVANCE INFORMATION

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit Conditions

Peak Pulse Power Dissipation

130 W

8/20μs, per Fig. 1

Peak Pulse Current

12 A

8/20μs, per Fig. 1

ESD Protection – Contact Discharge

ESD_Contac

±30 kV IEC 61000-4-2 Standard

ESD Protection – Air Discharge

ESD_Ai

±30 kV IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 6)

150 mW

Thermal Resistance, Junction to Ambient (Note 6)

833

°C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Standoff Voltage

RWM

- - 5 V -

Channel Leakage Current (Note 7)

- 5 100 nA

RWM

= 5V

Clamping Voltage

= 1A, t

= 8/20μs

= 12A, t

= 8/20μs

Breakdown Voltage

5.5 - 9.5 V

= 1mA

Differential Resistance

DIF

0.4 -

Ω

= 10A, t

= 8/20μs

Channel Input Capacitance

- 35 45 pF

= 0V, f = 1MHz

Notes: 6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

t, TIME ( s)

Fig. 1 Pulse Waveform

20 40

100

I , PEAK PULSE CURRENT (%I )

PppP

01 23 4 56

V , REVERSE VOLTAGE (V)

Fig. 2 Typical Total Capacitance vs. Reverse Voltage

E (pF)

f = 1 MHz

1 2 3 4

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