Diodes D18V0L1B2LP Bedienungsanleitung PDF herunterladen (Seite 2)

D18V0L1B2LP

Document number: DS36461 Rev. 1 - 2

2 of 5

www.diodes.com

March 2014

D18

0L1B2LP

NEW PRODUCT

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 5)

250 mW

Thermal Resistance, Junction to Ambient (Note 5)

θJA

500

°C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150

°C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Standoff Voltage

RWM

—

— 18 V —

Channel Leakage Current (Note 6)

— —

100 nA

RWM

= 18V

Clamping Voltage, Positive Transients

— 27

30 V

= 1A, t

= 8/20μS

— 30

34 V

= 2A, t

= 8/20μS

Breakdown Voltage

—

25 V

= 1mA

Differential Resistance

DIF

—

2.2 —

Ω

= 1A, t

= 8/20μS

Channel Input Capacitance

—

7.0 12 pF

= 0V, f = 1MHz

Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0125175

150

100

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

ISSI

(mW)

25 10050 75 150

125

250

175

Note 5

200

225

25 50

75 100 125

150

EAK

LSE DE

PEAK POWER OR CURRENT

T , AMBIENT TEMPERATURE (°C)

Figure 2 Pulse Derating Curve

100

175 200

1 2 3 4 5

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