Diodes AP2181D/AP2191D Bedienungsanleitung PDF herunterladen (Seite 4)

AP2181D/AP2191D

Document number: DS32251 Rev. 3 - 2

4 of 18

www.diodes.com

March 2013

AP2181D/AP2191D

Electrical Characteristics (@T

= +25°C, V

= +5.0V, unless otherwise specified.)

Symbol Parameter Test Conditions Min Typ Max Unit

UVLO

Input UVLO 1.6 1.9 2.5 V

SHDN

Input Shutdown Current

Disabled, I

OUT

= 0

0.5 1 µA

Input Quiescent Current

Enabled, I

OUT

= 0

45 70 µA

LEAK

Input Leakage Current Disabled, OUT grounded 0.1 1 µA

REV

Reverse Leakage Current

Disabled, V

= 0V, V

OUT

= 5V, I

REV

at V

0.1 1 µA

DS(ON)

Switch on-resistance

= 5V,

OUT

= 1.5A

= +25°C

SOT25, MSOP-8, SO-8,

MSOP-8-EP

95 115

m

U-DFN2018-6 90 110

-40°C  T

 +85°C

140

= 3.3V,

OUT

= 1.5A

= +25°C

120 140

-40°C  T

 +85°C

170

SHORT

Short-Circuit Current Limit

Enabled into short circuit, C

=120µF

2.0 A

LIMIT

Over-Load Current Limit

= 5V, V

OUT

= 4V, C

= 120µF, -40°C  T

 +85°C

1.6 2.1 2.6 A

Trig

Current Limiting Trigger Threshold

Output Current Slew rate (<100A/s) , C

= 120µF

2.6 A

EN Input Logic Low Voltage

= 2.7V to 5.5V

0.8 V

EN Input Logic High Voltage

= 2.7V to 5.5V

2 V

SINK

EN Input leakage

= 5V

1 µA

D(ON)

Output Turn-On Delay Time

= 1µF, R

LOAD

= 10

0.05 ms

Output Turn-On Rise Time

= 1µF, R

LOAD

= 10

0.6 1.5 ms

D(OFF)

Output Turn-Off Delay Time

= 1µF, R

LOAD

= 10

0.05 ms

Output Turn-Off Fall Time

= 1µF, R

LOAD

= 10

0.05 0.1 ms

FLG

FLG Output FET On-Resistance

FLG

=10mA

20 40 

Blank

FLG Blanking Time

= 10uF, C

= 22F

4 7 15 ms

DIS

Discharge Time

= µF, V

= 5V, disabled to V

OUT

< 0.5V

0.6 ms

DIS

Discharge Resistance (Note 5)

= 5V, disabled, I

OUT

= 1mA

100 

SHDN

Thermal Shutdown Threshold

Enabled, R

LOAD

= 1k

140

C

HYS

Thermal Shutdown Hysteresis 25

C



Thermal Resistance Junction-to-

Ambient

SOT25 (Note 6) 170

C/W

SO-8 (Note 6) 127

MSOP-8 (Note 6) 118

MSOP-8-EP (Note 7) 67

U-DFN2018-6 (Note 7) 70

Notes: 5. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path

for the external storage capacitor.

6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.

7. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground

plane.

1 2 3 4 5 6 7 8 9 ... 17 18

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