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ZXMHN6A07T8

SEMICONDUCTORS

ISSUE 2 - MAY 2004

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-source breakdown voltage V

(BR)DSS

60 V

= 250␮A, V

=0V

Zero gate voltage drain current I

DSS

1.0

␮A

= 60V, V

=0V

Gate-body leakage I

GSS

100 nA V

= ± 20V, V

=0V

Gate-source threshold voltage V

GS(th)

1.0 3.0 V

= 250␮A, V

Static drain-source on-state

resistance

(1)

DS(on)

0.3

0.45

⍀

= 10V, I

=1.8A

=4.5V,I

=1.3A

Forward transconductance

(1) (3)

2.3 S V

= 15V, I

=1.8A

DYNAMIC

(3)

Input capacitance C

iss

166 pF

= 40V, V

=0V

f= 1MHz

Output capacitance C

oss

20 pF

Reverse transfer capacitance C

rss

9pF

SWITCHING

(2) (3)

Turn-on-delay time t

d(on)

1.8 ns

= 30V, I

=1.8A

@ 6.0W,V

= 10V

Rise time t

1.4 ns

Turn-off delay time t

d(off)

4.9 ns

Fall time t

2.0 ns

Total gate charge Q

3.2 nC

= 30V, V

= 10V

=1.8A

Gate-source charge Q

0.7 nC

Gate drain charge Q

0.8 nC

SOURCE-DRAIN DIODE

Diode forward voltage

(1)

0.95 V T

= 25°C, I

= 0.45A,

=0V

Reverse recovery time

(3)

21 ns

= 25°C, I

=1.0A,

di/dt= 100A/␮s

Reverse recovery charge

(3)

21 nC

ELECTRICAL CHARACTERISTICS (at T

amb

= 25° C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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