Diodes ZXMC3A16DN8 Bedienungsanleitung PDF herunterladen (Seite 4)

ZXMC3A16DN8

ISSUE 1 - OCTOBER 2005

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage V

(BR)DSS

30 V

=250µA, V

=0V

Zero Gate Voltage Drain Current I

DSS

0.5

µA

=30V, V

=0V

Gate-Body Leakage I

GSS

100 nA

=±20V, V

=0V

Gate-Source Threshold Voltage V

GS(th)

=250µA, V

Static Drain-Source On-State Resistance

(1)

DS(on)

0.035

0.050

⍀

=10V, I

=9A

=4.5V, I

=7.4A

Forward Transconductance

(1)(3)

13.5 S V

=15V,I

=9A

DYNAMIC

(3)

Input Capacitance C

iss

796 pF

=25 V, V

=0V,

f=1MHz

Output Capacitance C

oss

137 pF

Reverse Transfer Capacitance C

rss

84 pF

SWITCHING

(2) (3)

Turn-On Delay Time t

d(on)

3.0 ns

=15V, I

=3.5A

=6.0Ω,V

=10V

Rise Time t

6.4 ns

Turn-Off Delay Time t

d(off)

21.6 ns

Fall Time t

9.4 ns

Gate Charge Q

9.2 nC V

=15V,V

=5V,

=3.5A

Total Gate Charge Q

17.5 nC

=15V,V

=10V,

=3.5A

Gate-Source Charge Q

2.3 nC

Gate-Drain Charge Q

3.1 nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

0.85 0.95 V T

=25°C, I

=5.1A,

=0V

Reverse Recovery Time

(3)

17.8 ns T

=25°C, I

=3.5A,

di/dt= 100A/µs

Reverse Recovery Charge

(3)

11.6 nC

N-CHANNEL

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

1 2 3 4 5 6 7 8 9 10

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