Diodes 2N7002T Bedienungsanleitung Seite 2

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Seitenansicht 1
2N7002T
Document number: DS30301 Rev. 14 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated
2N7002T
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
1.0MΩ V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 5) Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
d
150 mW
Thermal Resistance, Junction to Ambient
R
θ
JA
833 °C/W
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60
V
V
GS
= 0V, I
D
= 10μA
Zero Gate Voltage Drain Current @ T
C
= 25°C
@ T
C
= 125°C
I
DSS
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
±10 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
1.0
2.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance @ T
j
= 25°C
@ T
j
= 125°C
R
DS (ON)
2.0
4.4
7.5
13.5
Ω
V
GS
= 5.0V,
I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current
I
D
(
ON
)
0.5 1.0
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
22 50 pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
11 25 pF
Reverse Transfer Capacitance
C
rss
2.0 5.0 pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
t
D
(
ON
)
7.0 20 ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V, R
GEN
= 25Ω
Turn-Off Delay Time
t
D
(
OFF
)
11 20 ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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