Diodes 2DB1132P/Q/R Bedienungsanleitung PDF herunterladen (Seite 2)

2DB1132P/Q/R

Document number: DS31142 Rev: 6 - 2

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www.diodes.com

December 2013

2DB1132P/Q/R

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-40 V

Collector-Emitter Voltage

CEO

-32 V

Emitter-Base Voltage

EBO

-5 V

Continuous Collector Current

-1 A

Peak Pulse Current

-2 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation

(Note 5)

(Note 6) 1.5

(Note 7) 2.0

Thermal Resistance, Junction to Ambient Air

(Note 5)

θJA

125

°C/W

(Note 6) 83

(Note 7) 60

Thermal Resistance, Junction to Lead (Note 8)

θJL

22 °C/W

Operating and Storage Temperature Range

STG

-55 to +150 °C

ESD Ratings (Note 9)

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A

Electrostatic Discharge - Machine Model ESD MM 400 V C

Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured

under still air conditions whilst operating in a steady-state.

6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.

7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.

8. Thermal resistance from junction to solder-point (on the exposed collector pad).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

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