Diodes 2DA2018 Bedienungsanleitung PDF herunterladen (Seite 2)

2DA2018

Document number: DS31823 Rev. 3 - 2

2 of 5

www.diodes.com

October 2010

2DA2018

ADVANCE INFORMATION

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-15 V

Collector-Emitter Voltage

CEO

-12 V

Emitter-Base Voltage

EBO

-6 V

Collector Current - Continuous

-500 mA

Peak Pulse Collector Current

-1 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @ T

= 25°C P

150 mW

Thermal Resistance, Junction to Ambient (Note 4) @ T

= 25°C

833

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.

100

120

140

160

P , POWER DISSIPATION (mW)

0 20 40 60 80 100 120 140 160

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Dissipation vs. Ambient Temperature

R = 833°C/W

100

0.0001 0.001 0.1 10 1,000

Fig. 2 Single Pulse Maximum Power Dissipation

t , PULSE DURATION TIME (s)

0.01 1 100

Single Pulse

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

R (t) = r(t) *

R = 470°C/W

(

)

EAK

SIE

)

0.0001 0.001 0.01 0.1 1 10 100 1,000

Fig. 3 Transient Thermal Response

t , PULSE DURATION TIME (s)

0.001

0.01

0.1

r(t),

ANSIEN

MAL

ESIS

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

R (t) = r(t) *

R = 470°C/W

P(pk)

D = 0.7

D = 0.5

D = 0.3

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.1

1 2 3 4 5

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