Diodes ZXMS6004DG Bedienungsanleitung

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Issue 1 - December 2008 1 www.zetex.com
© Diodes Incorporated, 2008 www.diodes.com
A Product Line of
Diodes Incorporated
ZXMS6004DG
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage 60 V
On-state resistance 500 mΩ
Nominal load current (V
IN
= 5V) 1.3 A
Clamping energy 490mJ
Description
The ZXMS6004DG is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004DG is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
Ordering information
Device Part mark Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMS66004DGTA ZXMS
6004D
7 12 embossed 3,000 units
D
Top view
S
D
IN
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Inhaltsverzeichnis

Seite 1 - Intellifet MOSFET

Issue 1 - December 2008 1 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comA Product Line ofDiodes IncorporatedZXMS6004DG60V N-channel self prot

Seite 2

ZXMS6004DGIssue 1 - December 2008 10 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comSales officesThe Americas3050 E. Hillcrest DriveWestlake V

Seite 3

ZXMS6004DGIssue 1 - December 2008 2 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comFunctional block diagramApplication information• Especially

Seite 4

ZXMS6004DGIssue 1 - December 2008 3 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comAbsolute maximum ratingsThermal resistanceNOTES(a) For a de

Seite 5

ZXMS6004DGIssue 1 - December 2008 4 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comRecommended operating conditionsThe ZXMS6004DG is optimised

Seite 6

ZXMS6004DGIssue 1 - December 2008 5 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comElectrical characteristics (at Tamb = 25°C unless otherwise

Seite 7

ZXMS6004DGIssue 1 - December 2008 6 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comElectrical characteristics - continuedNote:(a) Over-tempera

Seite 8

ZXMS6004DGIssue 1 - December 2008 7 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comTypical characteristics

Seite 9

ZXMS6004DGIssue 1 - December 2008 8 www.zetex.com© Diodes Incorporated, 2008 www.diodes.com

Seite 10

ZXMS6004DGIssue 1 - December 2008 9 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comPackage information - SOT223Note: Controlling dimensions ar

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