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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2  MARCH 94

FEATURES

* 200 Volt V

DS(on)

=25Ω

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

-200 V

Continuous Drain Current at T

amb

=25°C I

-120 mA

Pulsed Drain Current I

-1.2 A

Gate Source Voltage V

± 20

Power Dissipation at T

amb

=25°C P

tot

700 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

DSS

-200 V I

=-1mA, V

=0V

Gate-Source Threshold

Voltage

GS(th)

-1.5 -3.5 V ID=-1mA, V

= V

Gate-Body Leakage I

GSS

20 nA

=± 20V, V

=0V

Zero Gate Voltage Drain

Current

DSS

-10

-100

µA

=-200 V, V

=-160 V, V

=0V,

T=125°C

(2)

On-State Drain Current(1) I

D(on)

-300 mA V

=-25 V, V

=-10V

Static Drain-Source

On-State Resistance (1)

DS(on)

Ω

=-10V,I

=-150mA

Forward Transconductance

(1)(2)

50 mS V

=-25V,I

=-150mA

Input Capacitance (2) C

iss

100 pF

Common Source Output

Capacitance (2)

oss

25 pF V

=-25V, V

=0V, f=1MHz

Reverse Transfer

Capacitance (2)

rss

7pF

Turn-On Delay Time (2)(3) t

d(on)

7ns

≈-25V, I

=-150mA

Rise Time (2)(3) t

15 ns

Turn-Off Delay Time (2)(3) t

d(off)

12 ns

Fall Time (2)(3) t

15 ns

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2%

(2) Sample test.

(

E-Line

TO92 Compatible

3-425

ZVP2120A

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2  MARCH 94

FEATURES

* 200 Volt V

DS(on)

=25Ω

REFER TO ZVP2120A FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

-200 V

Continuous Drain Current at T

amb

=25°C I

-120 mA

Pulsed Drain Current I

-1.2 A

Gate Source Voltage V

± 20

Power Dissipation at T

amb

=25°C P

tot

700 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

DSS

-200 V I

=-1mA, V

=0V

Gate-Source Threshold

Voltage

GS(th)

-1.5 -3.5 V ID=-1mA, V

= V

Gate-Body Leakage I

GSS

20 nA

=± 20V, V

=0V

Zero Gate Voltage Drain

Current

DSS

-10

-100

µA

=-200 V, V

=-160 V, V

=0V,

T=125°C

(2)

On-State Drain Current(1) I

D(on)

-300 mA V

=-25 V, V

=-10V

Static Drain-Source On-State

Resistance (1)

DS(on)

Ω

=-10V,I

=-150mA

Forward Transconductance

(1)(2)

50 mS V

=-25V,I

=-150mA

Input Capacitance (2) C

iss

100 pF

Common Source Output

Capacitance (2)

oss

25 pF V

=-25V, V

=0V, f=1MHz

Reverse Transfer

Capacitance (2)

rss

7pF

Turn-On Delay Time (2)(3) t

d(on)

7ns

≈-25V, I

=-150mA

Rise Time (2)(3) t

15 ns

Turn-Off Delay Time (2)(3) t

d(off)

12 ns

Fall Time (2)(3) t

15 ns

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2%

(2) Sample test.

(

3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

E-Line

TO92 Compatible

ZVP2120C

3-428

1 2 3

ZVP2120A 1
ZVP2120C 1

Inhaltsverzeichnis

Seite 1 - ZVP2120C

P-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 2  MARCH 94FEATURES* 200 Volt VDS*RDS(on)=25ΩABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDra

Seite 2

TYPICAL CHARACTERISTICSOutput Characteristics VDS - Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)Transfer CharacteristicsNormalis

Seite 3

TYPICAL CHARACTERISTICSOutput Characteristics VDS - Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)Transfer CharacteristicsNormalis

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