Diodes SBR1U200P1 Bedienungsanleitung PDF herunterladen

SBR1U200P1

Document number: DS32093 Rev. 2 - 2

1 of 4

www.diodes.com

August 2010

SBR1U200P1

SBR and PowerDI are registered trademarks of Diodes Incorporated.

NEW PRODUCT

1.0A SBR

SURFACE MOUNT SUPER BARRIER RECTIFIER

PowerDI

123

Features

• Ultra Low Forward Voltage Drop

• Low Leakage Current

• Superior Reverse Avalanche Capability

• Excellent High Temperature Stability

• Patented Interlocking Clip Design for High Surge Current

Capacity

• Patented Super Barrier Rectifier Technology

• Soft, Fast Switching Capability

• 150ºC Operating Junction Temperature

• Lead Free Finish, RoHS Compliant (Note 1)

• “Green” Molding Compound (No Br, Sb)

Mechanical Data

• Case: PowerDI

123

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Polarity Indicator: Cathode Band

• Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.018 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

200 V

Average Rectified Output Current (See Figure 1)

1.0 A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

FSM

40 A

Thermal Characteristics

Characteristic Symbol Value Unit

Maximum Thermal Resistance Junction to Ambient (Note 2)

217 ºC/W

Maximum Thermal Resistance Junction to Ambient (Note 3)

138 ºC/W

Operating and Storage Temperature Range

, T

STG

-65 to +175 ºC

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Forward Voltage

0.75

0.60

0.82

0.68

= 1.0A, T

= 25ºC

= 1.0A, T

= 125ºC

Reverse Current (Note 4)

- - 50

μA

= 200V, T

= 25ºC

Reverse Recovery Time

- - 25 ns

= 0.5A, I

= 1A,

= 0.25A,

Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.

2. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.

3. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.

4. Short duration pulse test used to minimize self-heating effect.

Top View

1 2 3 4

Inhaltsverzeichnis

Seite 1

SBR1U200P1 Document number: DS32093 Rev. 2 - 2 1 of 4 www.diodes.com August 2010© Diodes Incorporated SBR1U200P1SBR and PowerDI are registered trad

Seite 2 - NEW PRODUCT

SBR1U200P1 Document number: DS32093 Rev. 2 - 2 2 of 4 www.diodes.com August 2010© Diodes Incorporated SBR1U200P1SBR and PowerDI are registered trad

SBR1U200P1 Document number: DS32093 Rev. 2 - 2 3 of 4 www.diodes.com August 2010© Diodes Incorporated SBR1U200P1SBR and PowerDI are registered trad

Seite 4

SBR1U200P1 Document number: DS32093 Rev. 2 - 2 4 of 4 www.diodes.com August 2010© Diodes Incorporated SBR1U200P1SBR and PowerDI are registered trad

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