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SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 FEBRUARY 1995

FEATURES

* Low saturation voltage

COMPLEMENTARY TYPE - FZT757

PARTMARKING DETAIL - FZT657

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

300 V

Collector-Emitter Voltage V

CEO

300 V

Emitter-Base Voltage V

EBO

Peak Pulse Current I

Continuous Collector Current I

0.5 A

Power Dissipation at T

amb

=25°C P

tot

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

(BR)CBO

300 V

=100µA

Collector-Emitter

Breakdown Voltage

(BR)CEO

300 V I

=10mA*

Emitter-Base Breakdown

Voltage

(BR)EBO

=100µA

Collector Cut-Off Current I

CBO

0.1

µA

=200V

Emitter Cut-Off Current I

EBO

0.1

µA

=3V

Collector-Emitter

Saturation Voltage

CE(sat)

0.5 V I

=100mA, I

=10mA*

Base-Emitter

Saturation Voltage

BE(sat)

1.0 V I

=100mA, I

=10mA*

Base-Emitter

Turn-On Voltage

BE(on)

1.0 V I

=100mA, V

=5V*

Static Forward Current

Transfer Ratio

=10mA, V

=5V*

=100mA, V

=5V*

Transition Frequency f

30 MHz I

=10mA, V

=20V

f=20MHz

Output Capacitance C

obo

20 pF V

=20V, f=1MHz

*Measured under pulsed conditions. Pulse Width=300

µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FZT657FZT657

3 - 214 3 - 213

TYPICAL CHARACTERISTICS

CE(sat)

v I

I - Collector Current (Amps)

(

)

I - Collector Current (Amps)

VBE(sat) v IC

(

)

I - Collector Current (Amps)

hFE v IC

Nor

sed G

(

)

I - Collector Current (Amps)

BE(on)

v I

(

)

Switching Speeds

I - Collector Current (Amps)

itchi

ng ti

11000

0.001

VCE - Collector Emitter Voltage (V)

Safe Operating Area

10 100

0.01

0.1

1 2

FZT657FZT657 1

Inhaltsverzeichnis

Seite 1 - FZT657FZT657

SOT223 NPN SILICON PLANARMEDIUM POWER TRANSISTORISSUE 3 FEBRUARY 1995FEATURES* Low saturation voltageCOMPLEMENTARY TYPE - FZT757PARTMARKING DETAIL -

Seite 2

SOT223 NPN SILICON PLANARMEDIUM POWER TRANSISTORISSUE 3 FEBRUARY 1995FEATURES* Low saturation voltageCOMPLEMENTARY TYPE - FZT757PARTMARKING DETAIL -

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