Diodes DNLS320E Bedienungsanleitung PDF herunterladen

DNLS320EDNLS320E

LOW V

CE(SAT)

NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Low Collector-Emitter Saturation Resistance R

CE(SAT)

= 80mΩ at 3A

• High DC Current Gain h

> 400 at I

= 2A

• Complementary PNP Type Available (DPLS325E)

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT-223

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.112 grams (approximate)

SOT-223

DS31326 Rev. 3 - 2

1 of 4

www.diodes.com

DNLS320E

NEW P PRRODUCT T EW ODUC

2,4

COLLECTOR

EMITTE

BASE

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

20 V

Collector-Emitter Voltage

CEO

20 V

Emitter-Base Voltage

EBO

5 V

Continuous Collector Current

3 A

Peak Pulse Current

8 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation @T

= 25°C (Note 3) P

1 W

Thermal Resistance, Junction to Ambient Air (Note 3) @T

= 25°C

125 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

Please click here to visit our online spice models database.

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Inhaltsverzeichnis

Seite 1 - DNLS320EDNLS320E

DNLS320EDNLS320E LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Resist

Seite 2 - NEW PRODUCT

Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Off Characteristics Coll

Seite 3 - (Top View)

0.001 0.01 0.1 1 1005001,0001,5002,000 I , COLLECTOR CURRENT (A)CV , COLLECTOR-EMITTER SATURATION VOLTAGE (V)CE(SAT)Fig. 4 Typical Collector-Emi

DS31326 Rev. 3 - 2 4 of 4 www.diodes.com DNLS320E © Diodes Incorporated Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60

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