Diodes DMN2400UFD Bedienungsanleitung

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DMN2400UFD
Document number: DS35475 Rev. 4 - 2
1 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMN2400UFD
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Package
I
D
T
A
= +25°C
20V
0.6 @ V
GS
= 4.5V
X1-DFN1212-3
0.9A
0.8 @ V
GS
= 2.5V
0.7A
1.0 @ V
GS
= 1.8V
0.5A
1.6 @ V
GS
= 1.5V
0.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Power management functions
Battery Operated Systems and Solid-State Relays
Load switch
Features
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: X1-DFN1212-3
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN2400UFD-7 X1-DFN1212-3 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Bottom View Equivalent Circuit Pin-out Top view
ESD PROTECTED
K24
YM
K24 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
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Inhaltsverzeichnis

Seite 1 - DMN2400UFD

DMN2400UFD Document number: DS35475 Rev. 4 - 2 1 of 6 www.diodes.com July 2012© Diodes Incorporated DMN2400UFDSourceBody Diode Gate Protection

Seite 2

DMN2400UFD Document number: DS35475 Rev. 4 - 2 2 of 6 www.diodes.com July 2012© Diodes Incorporated DMN2400UFD Maximum Ratings (@TA = +25°C, un

Seite 3

DMN2400UFD Document number: DS35475 Rev. 4 - 2 3 of 6 www.diodes.com July 2012© Diodes Incorporated DMN2400UFD 00.51.01.52.0012345Fig. 1 Typical

Seite 4

DMN2400UFD Document number: DS35475 Rev. 4 - 2 4 of 6 www.diodes.com July 2012© Diodes Incorporated DMN2400UFD 00.20.40.60.81.01.2Fig. 7 Gate T

Seite 5 - © Diodes Incorporated

DMN2400UFD Document number: DS35475 Rev. 4 - 2 5 of 6 www.diodes.com July 2012© Diodes Incorporated DMN2400UFD 0.00001 0.0001 0.001 0.01 0.1 1

Seite 6

DMN2400UFD Document number: DS35475 Rev. 4 - 2 6 of 6 www.diodes.com July 2012© Diodes Incorporated DMN2400UFD IMPORTANT NOTICE DIODES INCORPO

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