DMG1013T
Document number: DS31784 Rev. 5 - 2
1 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMG1013T
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= 25°C
-20V
700mΩ @ V
GS
= -4.5V
-460mA
900mΩ @ V
GS
= -2.5V
-420mA
1300m @ V
GS
= -1.8V
-350mA
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 3kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Load switch
• Power management functions
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMG1013T-7 SOT523 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2015 2015
Code W X Y Z A B C C C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT523
Top View
Equivalent Circuit
To
View
G
S
D
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
PA1
YM
Source
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 3kV
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