Diodes 1N5819HW Bedienungsanleitung PDF herunterladen

1N5819HW

Document number: DS30217 Rev. 15 - 2

1 of 4

www.diodes.com

February 2010

1N5819HW

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

• Guard Ring Die Construction for Transient Protection

• Low Power Loss, High Efficiency

• High Surge Capability

• High Current Capability and Low Forward Voltage Drop

• For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Application

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 4)

Mechanical Data

• Case: SOD-123

• Plastic Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Polarity: Cathode Band

• Leads: Matte Tin Finish annealed over Alloy 42 leadframe (Lead

Free Plating) Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.01 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage @ I

= 1.0mA

DC Blocking Voltage

RRM

RWM

40 V

RMS Reverse Voltage

(

RMS

)

28 V

Average Rectified Output Current @ T

= 90°CI

1.0 A

Repetitive Peak Forward Current

≤

1ms, δ ≤ 0.5

FRM

1.5 A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

FSM

25 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 2)

450 mW

Typical Thermal Resistance Junction to Ambient (Note 2)

222

°C/W

Operating and Storage Temperature Range

STG

-65 to +125

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 3)

(

)

⎯ ⎯

= 1.0mA

Forward Voltage

⎯

0.320

0.450

0.750

= 0.1A

= 1.0A

= 3.0A

Reverse Leakage Current (Note 3)

⎯

1.5

1.0

μA

= 40V, T

= 25°C

= 40V, T

= 100°C

= 4V, T

= 25°C

= 4V, T

= 100°C

= 6V, T

= 25°C

= 6V, T

= 100°C

Total Capacitance

⎯

50 60 pF

= 4V, f = 1.0MHz

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Device mounted on FR-4 PC Board, 2"x2", 2 oz. Copper, single sided, Cathode pad dimensions 0.75"x1.0", Anode pad dimensions 0.25"x1.0".

3. Short duration pulse test used to minimize self-heating effect.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

Fire Retardants.

Top View

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1N5819HW 1

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1N5819HW Document number: DS30217 Rev. 15 - 2 1 of 4 www.diodes.com February 2010© Diodes Incorporated 1N5819HW 1.0A SURFACE MOUNT SCHOTTKY BARRIE

Seite 2

1N5819HW Document number: DS30217 Rev. 15 - 2 2 of 4 www.diodes.com February 2010© Diodes Incorporated 1N5819HW 0.010.11100.0010.000101.00.60.80

1N5819HW Document number: DS30217 Rev. 15 - 2 3 of 4 www.diodes.com February 2010© Diodes Incorporated 1N5819HW Ordering Information (Note 5)

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1N5819HW Document number: DS30217 Rev. 15 - 2 4 of 4 www.diodes.com February 2010© Diodes Incorporated 1N5819HW IMPORTANT NOTICE DIODES INC

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