Diodes DMN2016LFG Bedienungsanleitung PDF herunterladen

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

1 of 6

www.diodes.com

January 2012

DMN2016LFG

ADVANCE INFORMATION

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on) max

= 25°C

20V

18mΩ @ V

= 4.5V

5.2A

30mΩ @ V

= 1.8V

4.0A

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• Power management functions

• Battery Pack

• Load Switch

Mechanical Data

• Case: U-DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.0172 grams (approximate)

Ordering Information (Note 6)

Part Number Case Packaging

DMN2016LFG-7 U-DFN3030-8 3000 / Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Bottom View Bottom View

Pin Configuration

ESD PROTECTED TO 2kV

Top View

Equivalent Circuit

View

S1G1S2G2

D1/D2

5678

4321

5678

4321

N20 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 09 for 2009)

WW = Week code (01 to 53)

YYWW

N20

U-DFN3030-8

1 2 3 4 5 6

Inhaltsverzeichnis

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