Diodes DMN2013UFX Bedienungsanleitung PDF herunterladen

DMN2013UFX

Document number: DS36657 Rev. 2 - 2

1 of 6

www.diodes.com

March 2014

DMN2013UFX

Dual N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

max

= +25°C

20V

11.5m @ V

= 4.5V

10 A

14m @ V

= 2.5V

9 A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

 General Purpose Interfacing Switch

 Power Management Functions

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 ESD Protected

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: W-DFN5020-6

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Weight: 0.03 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN2013UFX-7 W-DFN5020-6 3000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Equivalent Circuit

Top View

W-DFN5020-6

FX = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

Bottom View

S1S1G1

S2S2G2

D1/D2

Top View

Pin-Out

ESD PROTECTED

1 2 3 4 5 6

Inhaltsverzeichnis

Seite 1 - DMN2013UFX

DMN2013UFX Document number: DS36657 Rev. 2 - 2 1 of 6 www.diodes.com March 2014© Diodes Incorporated DMN2013UFXDual N-CHANNEL ENHANCEMENT MODE MOSF

Seite 2 - Thermal Characteristics

DMN2013UFX Document number: DS36657 Rev. 2 - 2 2 of 6 www.diodes.com March 2014© Diodes Incorporated DMN2013UFX Maximum Ratings (@TA = +25°C, unles

Seite 3

DMN2013UFX Document number: DS36657 Rev. 2 - 2 3 of 6 www.diodes.com March 2014© Diodes Incorporated DMN2013UFX 0.05.010.015.020.025.030.00 0.

Seite 4

DMN2013UFX Document number: DS36657 Rev. 2 - 2 4 of 6 www.diodes.com March 2014© Diodes Incorporated DMN2013UFX T , JUNCTION TEMPERATURE ( C)

Seite 5 - Suggested Pad Layout

DMN2013UFX Document number: DS36657 Rev. 2 - 2 5 of 6 www.diodes.com March 2014© Diodes Incorporated DMN2013UFX Package Outline Dimensions Please

Seite 6

DMN2013UFX Document number: DS36657 Rev. 2 - 2 6 of 6 www.diodes.com March 2014© Diodes Incorporated DMN2013UFX IMPORTANT NOTICE DIODES INCORPORAT

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Tabulka s obsahem

Introduction

Safety Instructions

Maintenance Guidelines

Troubleshooting

Technical Specifications

1. Introduction

Prescriptions de sécurité

Notice d’entretien

Problèmes et solutions

Spécifications techniques

1. Inleiding

Veiligheidsinstructies

Onderhoudsvoorschriften

Problemen en oplossingen

Technische specificaties

Introducción

Instrucciones de seguridad

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Solución de problemas

Especificaciones

Sicherheitshinweise

Einführung

Wartungsvorschriften

Problemlösung

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Prescrições de segurança

Manutenção

Problemas e soluções

Especificações técnicas

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Diodes DMN2013UFX Bedienungsanleitung